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TIP35C |
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| Part Number | TIP35C |
| Manufacturer | Multicomp |
| Description | TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. • Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Pin 1. Base 2. Collect. |
| Features |
• Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. • Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Dimensions A B C D E F G H I J K L M N O P Minimum Maximum 20.63 22.38 15.38 16.20 1.90 2.70 5.10 6.10 14.81 15.22 11.72 12.84 4.20 4.50 1.82 2.46 2.92 3.23 0.89 1.53 5.26 5.66 18.50 21.50 4.68 5.36 2.40 2.80 3.25 3.65 0.55 0.70 Dimensions : Millimetres NPN PNP TIP35C TIP36C 25 Ampere Complementary Silicon Power T. |
| Datasheet |
 TIP35C Data Sheet
PDF 199.80KB |
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TIP35C |
| Part Number | TIP35C |
| Manufacturer | nELL |
| Title | Complementary Silicon Power Transistor |
| Description | SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation. |
| Features | Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (M. |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | STMicroelectronics |
| Title | Complementary power transistors |
| Description | The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP35C TIP36C Marking TIP. |
| Features |
■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device sum. |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package. / Features ，， TIP36C 。 Low leakage current, high current gain bandwidth product, Complementary to TIP36C. / Applications 。 Power amplifier and switching applications. / Equivalent Circuit / Pinning PIN1：Base PIN 2：Collecto. |
| Features | ，， TIP36C 。 Low leakage current, high current gain bandwidth product, Complementary to TIP36C. / Applications 。 Power amplifier and switching applications. / Equivalent Circuit / Pinning PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 TIP35C Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) . |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | Motorola |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Ty. |
| Features |
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MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above. |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | KEC |
| Title | TRIPLE DIFFUSED NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu. |
| Features | Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 100 100 5 25 5.0 125 150 -. |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | BOURNS |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 i. |
| Features | . |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package www.datasheet4u.com ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A. |
| Features | .0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP35 Collector-emitter sustaining voltage TIP35A IC=30mA ;IB=0 TIP35B TIP35C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off . |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | Comset Semiconductors |
| Title | Silicon Power Transistors |
| Description | SEMICONDUCTORS NPN TIP35-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings TI. |
| Features | @ Tc < 25° PC Power Dissipation @ Ta < 25° 125 Watts 3.5 TJ Junction Temperature http://www.DataSheet4U.net/ 150 °C -65 to +150 Ts Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings TIP35 TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C Value Unit RthJ-MB From junction to mounting base 1 °C/W RthJ-A From junction to ambient in free air 35.7 °C/W 04/10/2012 COMSET. |
TIP35C |
| Part Number | TIP35C |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | TIP35A, TIP35B, TIP35C Silicon NPN Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute M. |
| Features | D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP35A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TI. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP35 |
nELL |
Complementary Silicon Power Transistor |
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| 2 | TIP35 |
BOURNS |
NPN SILICON POWER TRANSISTORS |
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| 3 | TIP35 |
Central Semiconductor |
Complementary Silicon Power Transistors |
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| 4 | TIP35 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | TIP35 |
Comset Semiconductors |
Silicon Power Transistors |
|
| 6 | TIP35 |
INCHANGE |
NPN Transistor |
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| 7 | TIP3526 |
Vishay Intertechnology |
Infrared Touch Panels |
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| 8 | TIP35A |
nELL |
Complementary Silicon Power Transistor |
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| 9 | TIP35A |
BOURNS |
NPN SILICON POWER TRANSISTORS |
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| 10 | TIP35A |
Motorola |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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