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TIP35A |
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| Part Number | TIP35A |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type TIP36A ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power ampli. |
| Features | s registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A VBE(on)-1 Base-Emitter On Voltage IC= 15A; VCE= 4V VBE(on)-2 Base-Emitter On Voltage IC= 25A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current VCE= 60V; VEB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hF. |
| Datasheet |
 TIP35A Data Sheet
PDF 192.43KB |
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TIP35A |
| Part Number | TIP35A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package www.datasheet4u.com ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A. |
| Features | .0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP35 Collector-emitter sustaining voltage TIP35A IC=30mA ;IB=0 TIP35B TIP35C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off . |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | Comset Semiconductors |
| Title | Silicon Power Transistors |
| Description | SEMICONDUCTORS NPN TIP35-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings TI. |
| Features | @ Tc < 25° PC Power Dissipation @ Ta < 25° 125 Watts 3.5 TJ Junction Temperature http://www.DataSheet4U.net/ 150 °C -65 to +150 Ts Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings TIP35 TIP35A TIP35B TIP35C TIP35 TIP35A TIP35B TIP35C Value Unit RthJ-MB From junction to mounting base 1 °C/W RthJ-A From junction to ambient in free air 35.7 °C/W 04/10/2012 COMSET. |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | Central Semiconductor |
| Title | Complementary Silicon Power Transistors |
| Description | The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-B. |
| Features | . |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | TIP35A, TIP35B, TIP35C Silicon NPN Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute M. |
| Features | D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP35A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TI. |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | BOURNS |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 i. |
| Features | . |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | Motorola |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Ty. |
| Features |
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MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above. |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon High-Power Transistors |
| Description | Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @. |
| Features |
• 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Symbol Rating TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Unit VCEO Collector − Emitter Voltage 60 VCB Collector − Base Voltage 60 VEB Emitter − Bas. |
TIP35A |
| Part Number | TIP35A |
| Manufacturer | nELL |
| Title | Complementary Silicon Power Transistor |
| Description | SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation. |
| Features | Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (M. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP35 |
nELL |
Complementary Silicon Power Transistor |
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| 2 | TIP35 |
BOURNS |
NPN SILICON POWER TRANSISTORS |
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| 3 | TIP35 |
Central Semiconductor |
Complementary Silicon Power Transistors |
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| 4 | TIP35 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | TIP35 |
Comset Semiconductors |
Silicon Power Transistors |
|
| 6 | TIP35 |
INCHANGE |
NPN Transistor |
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| 7 | TIP3526 |
Vishay Intertechnology |
Infrared Touch Panels |
|
| 8 | TIP35AB |
INCHANGE |
NPN Transistor |
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| 9 | TIP35AF |
CDIL |
POWER TRANSISTORS |
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| 10 | TIP35AF |
INCHANGE |
NPN Transistor |
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Desde 2024. D4U Semiconductor.
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