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TBC337 |
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| Part Number | TBC337 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS ARE TBC327 AND TBC328. FEATURES . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C. |
| Features | . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TBC337 TBC338 Collector Current DC Peak Base Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V (BR)CBO v (BR) CEO V (BR)EBO ic ICP IB PC Ti T stg RATING 50 30 45 25 5 500 1000 100 625 150 -65-150 . |
| Datasheet |
 TBC337 Data Sheet
PDF 34.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TBC338 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | TBC327 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | TBC328 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | TBC-DS |
Token Electronics |
Hall Current Sensor |
|
| 5 | TBC06DS |
Token Electronics |
Hall Current Sensor |
|
| 6 | TBC0747 |
Siemens |
DUAL OPERATIONAL AMPLIFIER |
|
| 7 | TBC0748 |
Siemens |
Operational Amplifier |
|
| 8 | TBC1458 |
Siemens |
DUAL OPERATIONAL AMPLIFIER |
|
| 9 | TBC15DS |
Token Electronics |
Hall Current Sensor |
|
| 10 | TBC2332 |
Siemens |
DUAL OPERATIONAL AMPLIFIER |
|
Desde 2024. D4U Semiconductor.
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