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TBC328 |
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| Part Number | TBC328 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. Unit in mm FEATURES . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Col. |
| Features | . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC ic Peak ICP Base Current (DC) IB Collector Power Dissipation PC Junction Temperature Storage Temperature Range Lstg RATING -50 -30 -45 -25 -500 -1000 -100 625 150 -65-150 UNIT mA mA mW 1. COLLECTOR 2. EASE 3. EMITTER EI A J Weight : 0.21g . |
| Datasheet |
 TBC328 Data Sheet
PDF 35.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TBC327 |
Toshiba |
Silicon PNP Transistor |
|
| 2 | TBC337 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | TBC338 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | TBC-DS |
Token Electronics |
Hall Current Sensor |
|
| 5 | TBC06DS |
Token Electronics |
Hall Current Sensor |
|
| 6 | TBC0747 |
Siemens |
DUAL OPERATIONAL AMPLIFIER |
|
| 7 | TBC0748 |
Siemens |
Operational Amplifier |
|
| 8 | TBC1458 |
Siemens |
DUAL OPERATIONAL AMPLIFIER |
|
| 9 | TBC15DS |
Token Electronics |
Hall Current Sensor |
|
| 10 | TBC2332 |
Siemens |
DUAL OPERATIONAL AMPLIFIER |
|
Desde 2024. D4U Semiconductor.
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