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| Part Number | SI2301DS |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | Si2301DS |
| Manufacturer | TEMIC |
| Title | P-Channel MOSFET |
| Description | P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V ID (A) –2.3 –1.9 Si2301DS TO-236 (SOT-23) G1 S2 3D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Drain-Source Voltage . |
| Features | Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70627. Siliconix S-51354—Rev. B, 11-Dec-96 4-1 Si2301DS Specificationsa Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentc Drain-Source On-Resistancec Forward Transconductancec Diode Forward Voltage Dynamicb Total Gate Charge Gate-S. |
| Part Number | Si2301DS |
| Manufacturer | Kexin |
| Title | P-Channel MOSFET |
| Description | SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm . |
| Features |
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre. |
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Desde 2024. D4U Semiconductor.
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