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| Part Number | STW18NM60ND |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | STW18NM60ND |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD To. |
| Features |
·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-S. |
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Desde 2024. D4U Semiconductor.
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