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STW18NM60ND |
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| Part Number | STW18NM60ND |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolution... |
| Features |
Order codes
STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND
VDSS @ TJmax
650 V
RDS(on) max
ID
<0.29 Ω 13 A
• The worldwide best RDS(on)* area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices featur... |
| Document |
 STW18NM60ND Data Sheet
PDF 913.88KB |
Similar Datasheet
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| 1 | STW18NM60N |
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| 2 | STW18NM60N |
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Desde 2024. D4U Semiconductor.
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