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| Part Number | STP32NM50N |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | STP32NM50N |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Sourc. |
| Features | D=1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=11A 0.13 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±100 nA VDS= 500V; VGS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0;TC=125℃ 1 µA 100 VSD Diode Forward On-Voltage IS=22A ;VGS= 0 1.6 V NOTICE： ISC reserves the rights to make changes . |
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Desde 2024. D4U Semiconductor.
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