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STP32NM50N |
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| Part Number | STP32NM50N |
| Manufacturer | INCHANGE |
| Description | ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc... |
| Features |
D=1mA
500
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=11A
0.13 Ω
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
±100 nA
VDS= 500V; VGS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0;TC=125℃
1 µA
100
VSD
Diode Forward On-Voltage
IS=22A ;VGS= 0
1.6
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for ... |
| Document |
 STP32NM50N Data Sheet
PDF 226.65KB |
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