Part Number | STB21NM60ND |
Distributor | Stock | Price | Buy |
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Part Number | STB21NM60ND |
Manufacturer | STMicroelectronics |
Title | N-channel MOSFET |
Description | 6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching perform. |
Features |
Order codes
STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
VDSS @ TJmax
650 V 650 V 650 V 650 V
RDS(on) max
0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω
ID
17 A 17 A 17 A 17 A
• Intrinsic fast-recovery body diode • Worldwide best RDS(on)*area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche. |
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