STB21NM60ND |
Part Number | STB21NM60ND |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB21NM60ND ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Min... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±25 17 10 68 PD Total Dissipation @TC=25℃ 140 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CH... |
Document |
STB21NM60ND Data Sheet
PDF 199.49KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STB21NM60N |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STB21NM60N-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STB21NM60ND |
STMicroelectronics |
N-channel MOSFET | |
4 | STB21NM50N |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STB21NM50N-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB21N65M5 |
STMicroelectronics |
N-CHANNEL MOSFET |