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| Part Number | STB15NM60ND |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | STB15NM60ND |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Sou. |
| Features | tage VDS= VGS; ID=0.25mA 3 5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A 0.299 mΩ IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VDS=600V; VGS= 0;TC= 125℃ 1 µA 100 VSD Forward On-Voltage IS= 14A; VGS=0 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t. |
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