STB15NM60ND INCHANGE N-Channel MOSFET Datasheet. existencias, precio

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STB15NM60ND

INCHANGE
STB15NM60ND
STB15NM60ND STB15NM60ND
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Part Number STB15NM60ND
Manufacturer INCHANGE
Description ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power ...
Features tage VDS= VGS; ID=0.25mA 3 5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A 0.299 mΩ IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VDS=600V; VGS= 0;TC= 125℃ 1 µA 100 VSD Forward On-Voltage IS= 14A; VGS=0 1.3 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The p...

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