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SST2622 |
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| Part Number | SST2622 |
| Manufacturer | SeCoS |
| Description | 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-industrial applications. 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25 1.40 1.80 0 o 10 o 1.20Ref. Features * RoHS Compliant * . |
| Features |
* RoHS Compliant * Low Gate Charge * Surface Mount Package D1 D2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 ±20 520 410 1.5 0.8 0.006 -55~+150 Unit V V mA mA A W W/ C o o C Thermal Data Parameter Therm. |
| Datasheet |
 SST2622 Data Sheet
PDF 398.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SST2623 |
SeCoS |
P-Channel MOSFET |
|
| 2 | SST2625 |
SeCoS |
P-Channel MOSFET |
|
| 3 | SST2629S |
SeCoS |
P-CHANNEL MOSFET |
|
| 4 | SST2602 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 5 | SST2603 |
SeCoS |
P-Channel MOSFET |
|
| 6 | SST2604 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 7 | SST2605 |
SeCoS |
P-Channel MOSFET |
|
| 8 | SST2610 |
VBsemi |
N-Channel MOSFET |
|
| 9 | SST2610 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 10 | SST2611B |
SeCoS |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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