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SST2610 |
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| Part Number | SST2610 |
| Manufacturer | SeCoS |
| Description | z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.0. |
| Features | VGS ID ID ID PD Tj, Tstg Ratings 60 ±20 3.0 2.3 10 2 0.016 -55 ~ +150 Unit V V A A A W W/ ℃ ℃ THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 62.5 Unit ℃ / W RθJA 01-June-2005 Rev. A Page 1 of 4 www.DataSheet4U.com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current Zero Gate V. |
| Datasheet |
 SST2610 Data Sheet
PDF 1.51MB |
| Distributor | Stock | Price | Buy |
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SST2610 |
| Part Number | SST2610 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | SST2610-VB PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration SST2610-VB Datasheet N-Channel 60 V (D-S) MOSFET 60 0.030 0.035 7 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested www.VBsemi.com TSOP-6 D1 D2 6D 5D G3 4S Top Vi. |
| Features |
• TrenchFET® power MOSFET • 100 % Rg and UIS tested www.VBsemi.com TSOP-6 D1 D2 6D 5D G3 4S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SST2611B |
SeCoS |
P-Channel MOSFET |
|
| 2 | SST2602 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 3 | SST2603 |
SeCoS |
P-Channel MOSFET |
|
| 4 | SST2604 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 5 | SST2605 |
SeCoS |
P-Channel MOSFET |
|
| 6 | SST2622 |
SeCoS |
N-Channel MOSFET |
|
| 7 | SST2623 |
SeCoS |
P-Channel MOSFET |
|
| 8 | SST2625 |
SeCoS |
P-Channel MOSFET |
|
| 9 | SST2629S |
SeCoS |
P-CHANNEL MOSFET |
|
| 10 | SST2630 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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