SSPRDJ4411-C |
Part Number | SSPRDJ4411-C |
Manufacturer | SeCoS |
Description | The SSPRDJ4411-C is the highest performance trench Dual P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ4411-C meet the RoHS and Green Product requirement with full function reliability approved. DFN3x3-8DJ FEATURES Advanced High Cell Density T. |
Features |
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J4411 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1.535 1.935 0.28 0.48 REF. H J K L M N Millimeter Min. Max. 0.55 0.75 0.3 0.5 0.315 0.515 0.2 0.4 0.152 REF. 0.65 0.85 Mounting Pad Layout ORDER INFORMATION Part Number Type SSPRDJ4411-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage. |
Datasheet |
SSPRDJ4411-C Data Sheet
PDF 346.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSPRDJ4503A-C |
SeCoS |
N & P-Ch Enhancement Mode Power MOSFET | |
2 | SSPRDJ4504-C |
SeCoS |
Dual-Channel MOSFET | |
3 | SSPRDJ3522-C |
SeCoS |
Dual N-Ch Enhancement Mode Power MOSFET | |
4 | SSPRDJ6560-C |
SeCoS |
Dual-Channel MOSFET | |
5 | SSPR100N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
6 | SSPR10N06-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
7 | SSPR10N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
8 | SSPR18N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
9 | SSPR18N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
10 | SSPR30N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |