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SSPRDJ3522-C |
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| Part Number | SSPRDJ3522-C |
| Manufacturer | SeCoS |
| Description | The SSPRDJ3522-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ3522-C meet the RoHS and Green Product requirement with full function reliability approved. DFN3x3-8DJ FEATURES Advanced High Cell Density Tre. |
| Features | Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J3522 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1.535 1.935 0.28 0.48 REF. H J K L M N Millimeter Min. Max. 0.55 0.75 0.3 0.5 0.315 0.515 0.2 0.4 0.152 REF. 0.65 0.85 ORDER INFORMATION Part Number Type SSPRDJ3522-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS T. |
| Datasheet |
 SSPRDJ3522-C Data Sheet
PDF 248.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSPRDJ4411-C |
SeCoS |
Dual P-Ch Enhancement Mode Power MOSFET |
|
| 2 | SSPRDJ4503A-C |
SeCoS |
N & P-Ch Enhancement Mode Power MOSFET |
|
| 3 | SSPRDJ4504-C |
SeCoS |
Dual-Channel MOSFET |
|
| 4 | SSPRDJ6560-C |
SeCoS |
Dual-Channel MOSFET |
|
| 5 | SSPR100N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
|
| 6 | SSPR10N06-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | SSPR10N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 8 | SSPR18N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 9 | SSPR18N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 10 | SSPR30N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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