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SSG8N10 |
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| Part Number | SSG8N10 |
| Manufacturer | SeCoS |
| Description | The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 8. |
| Features | Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 8N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Dr. |
| Datasheet |
 SSG8N10 Data Sheet
PDF 454.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSG8603-C |
SeCoS |
N & P-Ch Enhancement Mode Power MOSFET |
|
| 2 | SSG0410 |
SeCoS |
N-Channel MOSFET |
|
| 3 | SSG04N15B-C |
SeCoS |
N-Channel MOSFET |
|
| 4 | SSG05P03-C |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
| 5 | SSG07N04-C |
SeCoS |
N-CH Enhancement Mode Power MOSFET |
|
| 6 | SSG08N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 7 | SSG10N10 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 8 | SSG12N03 |
SeCoS |
N-Channel MOSFET |
|
| 9 | SSG13N10S-C |
SeCoS |
N-Channel Fast Switching MOSFET |
|
| 10 | SSG13P03 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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