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SSG08N10-C |
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| Part Number | SSG08N10-C |
| Manufacturer | SeCoS |
| Description | The SSG08N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The SSG08N10-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Lo. |
| Features | Advanced high cell density Trench technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSG08N10-C Lead (Pb)-free and Halogen-free SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage. |
| Datasheet |
 SSG08N10-C Data Sheet
PDF 579.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSG0410 |
SeCoS |
N-Channel MOSFET |
|
| 2 | SSG04N15B-C |
SeCoS |
N-Channel MOSFET |
|
| 3 | SSG05P03-C |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
| 4 | SSG07N04-C |
SeCoS |
N-CH Enhancement Mode Power MOSFET |
|
| 5 | SSG10N10 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 6 | SSG12N03 |
SeCoS |
N-Channel MOSFET |
|
| 7 | SSG13N10S-C |
SeCoS |
N-Channel Fast Switching MOSFET |
|
| 8 | SSG13P03 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
| 9 | SSG13P03-C |
SeCoS |
P-Channel MOSFET |
|
| 10 | SSG16P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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