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SPR18N15-C |
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| Part Number | SPR18N15-C |
| Manufacturer | SeCoS |
| Description | The SPR18N15-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR18N15-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Technology Super Low Gate. |
| Features | Advanced High Cell Density Technology Super Low Gate Charge MARKING 18N15 = Date code PR-8PP B D C θ eE A d b g PACKAGE INFORMATION Package MPQ Leader Size PR-8PP 3K 13 inch S ORDER INFORMATION S Part Number Type S G SPR18N15-C Lead (Pb)-free and Halogen-free F G D REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 0.9 1.1 θ 0° 12° D B 4.9 5.1 b 0.33 0.51 C 0.2 0.3 d 1.27 BSC D D 3.81 4 e 5.7 5.9 E 5.95 6.2 g 1.1 1.4 D F 0.1 0.2 G 3.81 4 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continu. |
| Datasheet |
 SPR18N15-C Data Sheet
PDF 575.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPR100N08SV-C |
SeCoS |
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| 2 | SPR100N30SG |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SPR1084N03 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | SPR1084N03-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
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| 5 | SPR118N06S-C |
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| 6 | SPR120N03S-C |
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N-Channel Shielded Gate Trench Power MOSFET |
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| 7 | SPR12N10 |
SeCoS |
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| 8 | SPR140N45SG |
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| 9 | SPR160N04S-C |
SeCoS |
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| 10 | SPR-1-08 |
TDI |
(SPR-1-08 / -10) SILICON MULTI-CHANNEL DETECTOR ARRAY |
|
Desde 2024. D4U Semiconductor.
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