SPR118N06S-C |
Part Number | SPR118N06S-C |
Manufacturer | SeCoS |
Description | The SPR118N06S-C is the highest performance N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous rectification applications. The SPR118N06S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Green Device Available Super Low Gate Charge Excel. |
Features |
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology MARKING PR-8PP 118N06S = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type SPR118N06S-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current 1 @VGS=10V ID TC=100°C Pulsed Drain Current 2 IDM Total Power Dissipation 3 TC=25°C PD Operati. |
Datasheet |
SPR118N06S-C Data Sheet
PDF 702.83KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SPR100N08SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
2 | SPR100N30SG |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
3 | SPR1084N03 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
4 | SPR1084N03-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
5 | SPR120N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
6 | SPR12N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
7 | SPR140N45SG |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SPR160N04S-C |
SeCoS |
N-Channel Fast Switching MOSFET | |
9 | SPR18N15-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
10 | SPR-1-08 |
TDI |
(SPR-1-08 / -10) SILICON MULTI-CHANNEL DETECTOR ARRAY |