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SI2312DS |
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| Part Number | SI2312DS |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | N-Channel 20 -V (D-S) MOSFET Si2312DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V ID (A) 4.9 4.4 3.9 Qg (Typ) 11.2 TO-236 (SOT-23) G1 S2 3D FEATURES D 1.8-V Rated D RoHS Compliant Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1—E3 (Lead (Pb). |
| Features |
D 1.8-V Rated D RoHS Compliant
Top View Si2312DS (C2) * *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1—E3 (Lead (Pb)-Free) Pb-free Available ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0.1 mH TA= 25_C TA= 70_C VDS VGS ID IDM IAS EAS IS PD TJ, Ts. |
| Datasheet |
 SI2312DS Data Sheet
PDF 66.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI2312 |
JinYu |
20V N-Channel MOSFET |
|
| 2 | Si2312 |
SiPU |
N-Channel MOSFET |
|
| 3 | SI2312 |
MCC |
N-Channel MOSFET |
|
| 4 | SI2312 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 5 | Si2312BDS |
Vishay |
N-Channel MOSFET |
|
| 6 | Si2312CDS |
Vishay |
N-Channel MOSFET |
|
| 7 | SI2312CDS-T1-GE3 |
VBsemi |
N-Channel MOSFET |
|
| 8 | SI2310 |
MCC |
N-channel FET |
|
| 9 | SI2310 |
CCSemi |
N-Channel Power MOSFET |
|
| 10 | SI2310 |
PUOLOP |
N-channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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