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SI2312CDS-T1-GE3 |
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| Part Number | SI2312CDS-T1-GE3 |
| Manufacturer | VBsemi |
| Description | SI2312CDS-T1-GE3 N-Channel 20 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS = 1.8 V ID (A)e 6a 6a 5.6 Qg (Typ.) 8.8 nC SOT-23 G1 S2 3D Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to Ro. |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 7. |
| Datasheet |
 SI2312CDS-T1-GE3 Data Sheet
PDF 845.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Si2312CDS |
Vishay |
N-Channel MOSFET |
|
| 2 | SI2312 |
JinYu |
20V N-Channel MOSFET |
|
| 3 | Si2312 |
SiPU |
N-Channel MOSFET |
|
| 4 | SI2312 |
MCC |
N-Channel MOSFET |
|
| 5 | SI2312 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
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| 6 | Si2312BDS |
Vishay |
N-Channel MOSFET |
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| 7 | SI2312DS |
Vishay Siliconix |
N-Channel MOSFET |
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| 8 | SI2310 |
MCC |
N-channel FET |
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| 9 | SI2310 |
CCSemi |
N-Channel Power MOSFET |
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| 10 | SI2310 |
PUOLOP |
N-channel MOSFET |
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Desde 2024. D4U Semiconductor.
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