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| Part Number | RFP70N06 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RFP70N06 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel MOSFET |
| Description | RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 File Number 3206.5 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic. |
| Features |
• 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG70N06 RFP70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 Symbo. |
| Part Number | RFP70N06 |
| Manufacturer | Harris |
| Title | N-Channel Enhancement-Mode Power MOSFETs |
| Description | The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in a. |
| Features |
• 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses. |
| Part Number | RFP70N06 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in applications such as swithing Reg. |
| Features |
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 70A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 70A; VGS= 0 M. |
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Desde 2024. D4U Semiconductor.
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