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| Part Number | RFP70N03 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RFP70N03 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N03 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching application. |
| Features |
·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source . |
| Part Number | RFP70N03 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFETs |
| Description | RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,. |
| Features |
• 70A, 30V • rDS(ON) = 0.010Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) JEDEC TO-262AA DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semic. |
| Part Number | RFP70N03 |
| Manufacturer | Harris |
| Title | N-Channel MOSFET |
| Description | The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in a. |
| Features |
• 70A, 30V • rDS(ON) = 0.010Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati. |
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| 2 | RFP70N06 |
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| 3 | RFP70N06 |
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| 4 | RFP70N06 |
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| 6 | RFP7N40 |
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| 7 | RFP-10-100RV |
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| 8 | RFP-10-50TV |
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| 9 | RFP-10-50TVC |
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| 10 | RFP-10-50TVR |
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Desde 2024. D4U Semiconductor.
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