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| Part Number | RFP50N06 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RFP50N06 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel MOSFET |
| Description | RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizatio. |
| Features |
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N06 RFP50N06 RF1S50N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG50N06 RFP50N06 F1S50N06 S G NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant. |
| Part Number | RFP50N06 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | MOSFET – Power, N-Channel 60 V, 50 A, 22 mW RFP50N06 These N−Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were d. |
| Features |
• 50 A, 60 V • rDS(ON) = 0.022 W • Temperature Compensating PSPICEt Model • Peak Current vs. Pulse Width Curve • UIS Rating Curve • 175°C Operating Temperature • This Device is Pb−Free and is RoHS Compliant Specifications ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specifieded) Symbol Parameter Rating Unit VDSS VDGR Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 . |
| Part Number | RFP50N06 |
| Manufacturer | Harris |
| Title | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| Description | Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizat. |
| Features |
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes. |
| Part Number | RFP50N06 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | Data Sheet September 2013 RFP50N06 N-Channel Power MOSFET 60V, 50A, 22 mΩ These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding pe. |
| Features |
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFP50N06 Rev. C0 RFP50N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note . |
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Desde 2024. D4U Semiconductor.
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