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RFP50N06 |
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| Part Number | RFP50N06 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Features |
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 50A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VS... |
| Document |
 RFP50N06 Data Sheet
PDF 225.63KB |
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Desde 2024. D4U Semiconductor.
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