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| Part Number | PHP18NQ11T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PHP18NQ11T |
| Manufacturer | NXP Semiconductors |
| Title | N-Channel FET |
| Description | www.DataSheet4U.com N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Fast switching s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Inverters s Switched-mode power supplies s Class-D audio amplifiers. 1.4 Q. |
| Features | s Fast switching s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Inverters s Switched-mode power supplies s Class-D audio amplifiers. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 79 W s ID ≤ 18 A s RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO-220AB), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d. |
| Part Number | PHP18NQ11T |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMET. |
| Features | 50µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=18A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9A IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 110V; VGS= 0 PHP18NQ11T MIN TYPE MAX UNIT 110 V 2.0 4.0 V 1.2 V 0.09 Ω ±100 nA 10 µA NOTICE： ISC reserves the rights to make changes. |
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Desde 2024. D4U Semiconductor.
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