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PHP18NQ11T |
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| Part Number | PHP18NQ11T |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Higher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
Class-D audio amplifiers DC-to-DC convertors
Inverters Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 18 A; VDS = 80 V; Tj = 25 °C; see... |
| Document |
 PHP18NQ11T Data Sheet
PDF 762.83KB |
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