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| Part Number | PHD20N06T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PHD20N06T |
| Manufacturer | nexperia |
| Title | N-channel TrenchMOS standard level FET |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to l. |
| Features | and benefits Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications DC-to-DC convertors General purpose switching Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current Tmb. |
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Desde 2024. D4U Semiconductor.
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