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PHD20N06T |
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| Part Number | PHD20N06T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 (D-PAK). 2. Features s TrenchMOS™ technology s Low... |
| Features |
s TrenchMOS™ technology s Low on-state resistance s Fast switching.
3. Applications
s Switched mode power supplies s DC to DC converters s General purpose switch.
c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g)
mb
Simplified outline
Symbol
drain (d) source (s) drain (d)
2 1 Top view 3
MBK091 MBB076
d
g s
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHD20N06T
N-channel TrenchMOS™ transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick referen... |
| Document |
 PHD20N06T Data Sheet
PDF 307.45KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PHD20N06T |
nexperia |
N-channel TrenchMOS standard level FET |
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| 2 | PHD21N06LT |
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| 3 | PHD22NQ20T |
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| 6 | PHD24N03LT |
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Desde 2024. D4U Semiconductor.
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