| Part Number | PBYR3045PT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | 15A, 45V, SILICON, RECTIFIER DIODE |
| Description | Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode... |
| Features |
VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 30 43 30 180 200 -45 45 45 45 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136 ˚C Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave; δ = 0.5; Tmb ≤ 130 ˚C
I2t IRRM IRSM Tstg Tj
t = 25 µs; δ = 0.5; Tmb ≤ 130 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms ... |
| Document |
 PBYR3045PT datasheet pdf (32.25KB)
|
| Distributor |
Quest Components All other distributors |
| Stock | 10 In Stock |
| Price | No price available |
| BuyNow |
 Buy Now (Manufacturer a Philips Semiconductors PBYR3045PT) |
| Part Number | PBYR3045PTF |
| Manufacturer | NXP |
| Title | Rectifier diodes schottky barrier |
| Description | Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and abs. |
| Features |
. SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 20 20 30 135 150 -45 45 45 45 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 113 ˚C Output current (both diodes conducting) RM. |
| Document | PBYR3045PTF datasheet pdf |
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