PBYR3045PT |
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Part Number | PBYR3045PT |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transi... |
Features |
VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 30 43 30 180 200 -45 45 45 45 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136 ˚C Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave; δ = 0.5; Tmb ≤ 130 ˚C
I2t IRRM IRSM Tstg Tj
t = 25 µs; δ = 0.5; Tmb ≤ 130 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms ... |
Datasheet |
![]() PDF 32.25KB |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes Schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes Schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes Schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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![]() NXP |
Rectifier diodes Schottky barrier |
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![]() NXP |
Rectifier diodes schottky barrier |
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Desde 2024. D4U Semiconductor.
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