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NVBG1000N170M1 |
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| Part Number | NVBG1000N170M1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L NVBG1000N170M1 Features • Typ. RDS(on) = 960 mW @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and Ro. |
| Features |
• Typ. RDS(on) = 960 mW @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Flyback Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VDSS 1700 V VGS −15/+25 V VGSop −5/+20 V C. |
| Datasheet |
 NVBG1000N170M1 Data Sheet
PDF 370.27KB |
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Desde 2024. D4U Semiconductor.
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