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NVBG040N120M3S SiC MOSFET

NVBG040N120M3S

NVBG040N120M3S
NVBG040N120M3S NVBG040N120M3S
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Part Number NVBG040N120M3S
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L NVBG040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a.
Features
• Typ. RDS(on) = 40 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 75 nC)
• High Speed Switching with Low Capacitance (Coss = 80 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −10/+22 V Recommended Operation Values TC < 1.
Datasheet Datasheet NVBG040N120M3S Data Sheet
PDF 226.18KB
Distributor Stock Price Buy

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