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NP2N11MR |
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| Part Number | NP2N11MR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V High power. |
| Features | VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch S Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 NP2N11 Package SOT-23-3L 1 2 G S Ordering Information Part Number NP2N11MR-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuous@Tj=125℃ -puls. |
| Datasheet |
 NP2N11MR Data Sheet
PDF 0.97MB |
| Distributor | Stock | Price | Buy |
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Desde 2024. D4U Semiconductor.
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