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NP20N10YDF |
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| Part Number | NP20N10YDF |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V) Logic level drive type D. |
| Features |
Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP20N10YDF-E1-AY *1 NP20N10YDF-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) . |
| Datasheet |
 NP20N10YDF Data Sheet
PDF 119.14KB |
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Desde 2024. D4U Semiconductor.
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