| Part Number | NDS9953A |
| Manufacturer | Fairchild |
| Title | Power Field-Effect Transistor, 2.9A, 30V, 0.13ohm, 2-Element, P-Channel, MOSFET ' |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul... |
| Features |
-2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A= 25°C unless otherwise noted
NDS9953A -30 ± 20
(Note 1a)
Units V V A
± 2.9 ± 10 2
Power Dissipation for Dual Operation Power Dissipation ... |
| Document |
 NDS9953A datasheet pdf (342.69KB)
|
| Distributor |
Rochester Electronics All other distributors |
| Stock | 253456 In Stock |
| Price | 1000 units: 0.5318 USD 500 units: 0.563 USD 100 units: 0.5881 USD 25 units: 0.6131 USD 1 units: 0.6256 USD
|
| BuyNow |
 Buy Now (Manufacturer a Fairchild Semiconductor Corporation NDS9953A) |
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