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NDB708A

Fairchild
NDB708A
Part Number NDB708A
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th...
Features 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million...

Datasheet NDB708A pdf datasheet - 74.91KB



NDB708BE

Fairchild
NDB708BE
Part Number NDB708BE
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th.
Features 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million.

Datasheet NDB708BE pdf datasheet




NDB708B

Fairchild
NDB708B
Part Number NDB708B
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th.
Features 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million.

Datasheet NDB708B pdf datasheet




NDB708AE

Fairchild
NDB708AE
Part Number NDB708AE
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th.
Features 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million.

Datasheet NDB708AE pdf datasheet





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