| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener... |
| Features | 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface... |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
|
|
|
Fairchild |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|
Contáctenos
|
Política de Privacidad
