| Part Number | NDB510B |
| Manufacturer | Fairchild |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener... |
| Features |
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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G
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Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Volta... |
| Document |
 NDB510B datasheet pdf (72.50KB)
|
| Part Number | NDB510BE |
| Manufacturer | Fairchild |
| Title | N-Channel MOSFET |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th. |
| Features |
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/. |
| Document | NDB510BE datasheet pdf |
| Part Number | NDB510AE |
| Manufacturer | Fairchild |
| Title | N-Channel MOSFET |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th. |
| Features |
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/. |
| Document | NDB510AE datasheet pdf |
| Part Number | NDB510A |
| Manufacturer | Fairchild |
| Title | N-Channel MOSFET |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th. |
| Features |
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/. |
| Document | NDB510A datasheet pdf |
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