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NDB510B

Fairchild
NDB510B
Part Number NDB510B
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th...
Features 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/...

Datasheet NDB510B pdf datasheet - 72.50KB



NDB510BE

Fairchild
NDB510BE
Part Number NDB510BE
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th.
Features 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/.

Datasheet NDB510BE pdf datasheet




NDB510AE

Fairchild
NDB510AE
Part Number NDB510AE
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th.
Features 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/.

Datasheet NDB510AE pdf datasheet




NDB510A

Fairchild
NDB510A
Part Number NDB510A
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th.
Features 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/.

Datasheet NDB510A pdf datasheet





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