| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener... |
| Features | 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface ... |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Insignis |
1Gb (x16) - DDR2 Synchronous DRAM |
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Desde 2024. D4U Semiconductor.
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