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NDB510BE |
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| Part Number | NDB510BE |
| Manufacturer | Fairchild |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
| Features |
15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Volta... |
| Document |
 NDB510BE Data Sheet
PDF 72.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDB510B |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDB510A |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDB510AE |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDB5060 |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDB5060L |
Fairchild |
N-Channel MOSFET |
|
| 6 | NDB508A |
Fairchild |
N-Channel MOSFET |
|
| 7 | NDB508AE |
Fairchild |
N-Channel MOSFET |
|
| 8 | NDB508B |
Fairchild |
N-Channel MOSFET |
|
| 9 | NDB508BE |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDB16P |
Insignis |
1Gb (x16) - DDR2 Synchronous DRAM |
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Desde 2024. D4U Semiconductor.
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