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NDB408BE |
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| Part Number | NDB408BE |
| Manufacturer | Fairchild |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devi. |
| Features | 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-. |
| Datasheet |
 NDB408BE Data Sheet
PDF 73.06KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDB408B |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDB408A |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDB408AE |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDB4050 |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDB4050L |
Fairchild |
N-Channel MOSFET |
|
| 6 | NDB4060 |
Fairchild |
N-Channel MOSFET |
|
| 7 | NDB4060L |
Fairchild |
N-Channel MOSFET |
|
| 8 | NDB410A |
Fairchild |
N-Channel MOSFET |
|
| 9 | NDB410AE |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDB410B |
Fairchild |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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