NDB410AE |
Part Number | NDB410AE |
Manufacturer | Fairchild |
Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devi. |
Features | 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage. |
Datasheet |
NDB410AE Data Sheet
PDF 74.01KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | NDB410A |
Fairchild |
N-Channel MOSFET | |
2 | NDB410B |
Fairchild |
N-Channel MOSFET | |
3 | NDB410BE |
Fairchild |
N-Channel MOSFET | |
4 | NDB4050 |
Fairchild |
N-Channel MOSFET | |
5 | NDB4050L |
Fairchild |
N-Channel MOSFET | |
6 | NDB4060 |
Fairchild |
N-Channel MOSFET | |
7 | NDB4060L |
Fairchild |
N-Channel MOSFET | |
8 | NDB408A |
Fairchild |
N-Channel MOSFET | |
9 | NDB408AE |
Fairchild |
N-Channel MOSFET | |
10 | NDB408B |
Fairchild |
N-Channel MOSFET |