NDB4060 datasheet

NDB4060

Part Number	NDB4060
Manufacturer	Fairchild
Title	15A, 60V, 0.1ohm, N-Channel Power MOSFET, TO-263AB '
Description	These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener...
Features	15A, 60V. RDS(ON) = 0.10Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ___________________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage ...
Document	NDB4060 datasheet pdf (66.96KB)
Distributor	Rochester Electronics All other distributors
Stock	2827 In Stock
Price	1000 units: 0.4738 USD 500 units: 0.5017 USD 100 units: 0.524 USD 25 units: 0.5463 USD 1 units: 0.5574 USD
BuyNow	Buy Now (Manufacturer a Fairchild Semiconductor Corporation NDB4060)

Part Number	NDB4060L
Manufacturer	Fairchild
Title	N-Channel MOSFET
Description	These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te.
Features	15A, 60V. RDS(ON) = 0.1Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. .
Document	NDB4060L datasheet pdf