NDB4060 |
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| Part Number | NDB4060 |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
| Features |
15A, 60V. RDS(ON) = 0.10Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage ... |
| Datasheet |
 NDB4060 Data Sheet
PDF 66.96KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Insignis |
1Gb (x16) - DDR2 Synchronous DRAM |
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