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| Part Number | MTW6N100E |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTW6N100E |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high ener. |
| Features |
perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C . |
similar datasheet
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|---|---|---|---|---|
| 1 | MTW6N60E |
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| 2 | MTW10N100E |
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| 3 | MTW10N100E |
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| 4 | MTW10N40E |
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| 6 | MTW14N50E |
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| 7 | MTW16N40E |
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| 8 | MTW16N40E |
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| 9 | MTW20N50E |
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| 10 | MTW20N50E |
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Desde 2024. D4U Semiconductor.
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