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MTW6N100E |
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| Part Number | MTW6N100E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Features |
ry Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate V... |
| Document |
 MTW6N100E Data Sheet
PDF 167.51KB |
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Desde 2024. D4U Semiconductor.
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