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| Part Number | MTB60N06HD |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTB60N06HD |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed sw. |
| Features | e Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VDGR VGS VGSM ID ID IDM PD 60 60 ± 20 ± 30 60 42.3 180 125 1.0 2.5 Operating and Storage Temperature R. |
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Desde 2024. D4U Semiconductor.
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